FQA44N10

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 48 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.039 Ohms


Features:

• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	48	A
		34	A
IDM	Drain Current - Pulsed (Note 1)	192	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	530	mJ
IAR	Avalanche Current (Note 1)	48	A
EAR	Repetitive Avalanche Energy (Note 1)	18	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	180	W
		1.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQA44N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQA44N10 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQA44N10 is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and

Parameters:

Technical/Catalog Information	FQA44N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	39 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	62nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA44N10 FQA44N10