MOSFET 150V N-Channel QFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 0.042 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3P | Packaging : | Tube |
Symbol |
Parameter |
FQA46N15 |
Units |
VDSS |
Drain-Source Voltage |
150 |
V |
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
50 |
A |
35.3 |
A | ||
IDM |
Drain Current - Pulsed (Note 1) |
200 |
A |
VGSS |
Gate-Source Voltage |
± 25 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ |
IAR |
Avalanche Current (Note 1) |
50 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
250 |
W |
1.67 |
W/ | ||
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+175 |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power FQA46N15 field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA46N15 is well suited for lo voltage applications such as audio amplifire,high efficiency switching for DC/DC conventers,and DC motor control,uninterrupted power supply.
Technical/Catalog Information | FQA46N15 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 3250pF @ 25V |
Power - Max | 250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | TO-3P |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQA46N15 FQA46N15 |