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FQA36P15_F109

MOSFET 150V P-Channel

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SeekIC No. : 00163745 Detail

FQA36P15_F109: MOSFET 150V P-Channel

FQA36P15_F109 Data Sheet

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Part Number:
FQA36P15_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 150 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.09 Ohms
Package / Case : TO-3PN
Drain-Source Breakdown Voltage : - 150 V


Parameters:

Technical/Catalog InformationFQA36P15_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs90 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 3320pF @ 25V
Power - Max294W
PackagingTube
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA36P15_F109
FQA36P15_F109



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