Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 36 A
Package / Case
: TO-3P
Resistance Drain-Source RDS (on)
: 0.052 Ohms
Features: • 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQA33N10L |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
36 |
A |
|
25.5 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
144 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
430 |
mJ |
| IAR |
Avalanche Current (Note 1) |
36 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
16.3 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
163 |
W |
|
1.09 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQA33N10L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA33N10L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA33N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQA33N10L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 36A |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
| Power - Max | 163W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 5V |
| Package / Case | TO-3P |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA33N10L
FQA33N10L
|
FQA33N10L Data Sheet
