FQA34N20

MOSFET 200V N-Channel QFET

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SeekIC No. : 00159905 Detail

FQA34N20: MOSFET 200V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA34N20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-3P


Parameters:

Technical/Catalog InformationFQA34N20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 25V
Power - Max210W
PackagingTube
Gate Charge (Qg) @ Vgs78nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA34N20
FQA34N20



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