Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 18.5 A
Package / Case
: TO-3PN
Resistance Drain-Source RDS (on)
: 0.38 Ohms
Features: * 18.5A, 600V, RDS(on) = 0.38 @VGS = 10 V
* Low gate charge ( typical 70 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQA19N60 |
Units |
|
VDSS |
Drain-Source Voltage |
600 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
18.5 |
A |
|
11.7 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
74 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1150 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
18.5 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
30 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
300 |
W |
|
2.38 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA19N60 field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.
This advanced technology FQA19N60 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA19N60 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
Parameters: | Technical/Catalog Information | FQA19N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 18.5A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 9.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 90nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA19N60
FQA19N60
|
FQA19N60 Data Sheet
