Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Continuous Drain Current
: 25 A
Package / Case
: TO-3P
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Features: * 25A, 200V, R DS(on) = 0.14 @VGS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating * Low level gate drive requirement allowing direct
operation from logic driversSpecifications
|
Symbol |
Parameter |
FQA19N20L |
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
25 |
A |
|
15.8 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
100 |
A |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
250 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
25 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
19 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
190 |
W |
|
1.52 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA19N20L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA19N20L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA19N20L is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQA19N20L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 12.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 5V |
| Package / Case | TO-3P |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA19N20L
FQA19N20L
|
FQA19N20L Data Sheet
