Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.17 Ohms
Package / Case
: TO-3P
Continuous Drain Current
: 21.8 A
Features: • 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
• Low gate charge ( typical 40.5 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Specifications
| Symbol |
Parameter |
FQA19N20C |
Units |
| VDSS |
Drain-Source Voltage |
200 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
21.8 |
A |
|
13.8 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
87.2 |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
433 |
mJ |
| IAR |
Avalanche Current (Note 1) |
21.8 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
18.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
180 |
W |
|
1.45 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQA19N20C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA19N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA19N20C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQA19N20C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 21.8A |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 10.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA19N20C
FQA19N20C
|
FQA19N20C Data Sheet
