Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Continuous Drain Current
: 20 A
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-3P
Resistance Drain-Source RDS (on)
: 0.265 Ohms
Features: * 20A, 500V, RDS(on) = 0.265 @VGS = 10 V
* Low gate charge ( typical 42 nC)
* Low Crss ( typical 11 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQA18N50V2 |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
20 |
A |
|
12.7 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
80 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
330 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
20 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
27.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
277 |
W |
|
2.22 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA18N50V2 field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.
This advanced technology FQA18N50V2 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. FQA18N50V2 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
Parameters: | Technical/Catalog Information | FQA18N50V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 265 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 277W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA18N50V2
FQA18N50V2
|
FQA18N50V2 Data Sheet
