FQA16N50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.32 Ohms


Features:

* 16A, 500V, R_DS(on)  = 0.32  @V_GS  = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical  35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol	Parameter	FQA16N50	Units
VDSS	Drain-Source Voltage	500	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	16	A
		10	A
IDM	Drain Current - Pulsed             (Note 1)	64	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	980	mJ
IAR	Avalanche Current                   (Note 1)	16	A
EAR	Repetitive Avalanche Energy         (Note 1)	20	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	200	W
		1.59	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

   These N-Channel enhancement mode power FQA16N50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQA16N50 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. FQA16N50 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.


Parameters:

Technical/Catalog Information	FQA16N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	320 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA16N50 FQA16N50