Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 80 V
Continuous Drain Current
: 160 A
Gate-Source Breakdown Voltage
: +/- 25 V
Package / Case
: TO-3PN
Resistance Drain-Source RDS (on)
: 0.007 Ohms
Features: • 160A, 80V, RDS(on) = 0.007Ω @VGS = 10 V
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 530 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQA160N08 |
Units |
| VDSS |
Drain-Source Voltage |
80 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
160 |
A |
|
113 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
640 |
A |
| VGSS |
Gate-Source Voltage |
±25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1600 |
mJ |
| IAR |
Avalanche Current (Note 1) |
160 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
37.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
375 |
W |
|
2.5 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQA160N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA160N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA160N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQA160N08 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 7900pF @ 25V |
| Power - Max | 375W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 290nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA160N08
FQA160N08
|
FQA160N08 Data Sheet
