FQA13N50CF_F109

MOSFET 500V N-Ch C-FET

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SeekIC No. : 00164994 Detail

FQA13N50CF_F109: MOSFET 500V N-Ch C-FET

floor Price/Ceiling Price

Part Number:
FQA13N50CF_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.48 Ohms
Package / Case : TO-3PN


Parameters:

Technical/Catalog InformationFQA13N50CF_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs480 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 2055pF @ 25V
Power - Max218W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA13N50CF_F109
FQA13N50CF_F109



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