Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.43 Ohms
Package / Case
: TO-3P
Continuous Drain Current
: 13.4 A
Features: * 13.4A, 500V, RDS(on) = 0.43 @VGS = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical 25 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQA13N50 |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
13.4 |
A |
|
8.5 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
53.6 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
13.4 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
19 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
190 |
W |
|
1.52 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA13N50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA13N50 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA13N50 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
Parameters: | Technical/Catalog Information | FQA13N50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 13.4A |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 6.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 2300pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA13N50
FQA13N50
|
FQA13N50 Data Sheet
