IGBT Transistors 600V -30A IGBT SMART POWER M
FPDB30PH60: IGBT Transistors 600V -30A IGBT SMART POWER M
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Collector-Emitter Saturation Voltage : | 2.4 V | Power Dissipation : | 83 W |
Packaging : | Tube |
Item |
Symbol |
Condition |
Rating |
Unit |
Supply Voltage |
Vi |
Applied between R-S |
264 |
VRMS |
Supply Voltage (Surge) |
V i(Surge) |
Applied between R-SApplied between P- N |
500 |
V |
Output Voltage |
VPN |
Applied between P- N |
450 |
V |
Output Voltage (Surge) |
VPN(Surge) |
500 |
V | |
Collector-emitter Voltage |
VCES |
TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz |
600 |
V |
Input Current (100% Load) |
Ii |
TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive |
20 |
A |
Input Current (125% Load) |
Ii(125%) |
TC = 25°C per One IGBT |
25 |
A |
Collector Dissipation |
PC |
TC < 125°C |
83 |
W |
Power Rating of Shunt Resistor |
PRSH |
(Note 1) |
2 |
W |
Operating Junction Temperature |
TJ |
-20 ~ 125 |
°C |
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to T J(ave) 125°C (@TC 100°C)
FPDB30PH60 is an advanced smart power module of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. FPDB30PH60 combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function.
Technical/Catalog Information | FPDB30PH60 |
Vendor | Fairchild Semiconductor |
Category | Integrated Circuits (ICs) |
Applications | - |
Current - Supply | 26mA |
Voltage - Supply | 20V |
Package / Case | SPM27GA |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FPDB30PH60 FPDB30PH60 |