IGBT Transistors 600V -20A IGBT SMART POWER M
FPDB20PH60: IGBT Transistors 600V -20A IGBT SMART POWER M
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Collector-Emitter Saturation Voltage : | 2.4 V | Gate-Emitter Leakage Current : | +/- 250 uA | ||
Power Dissipation : | 62.5 W | Packaging : | Tube |
Technical/Catalog Information | FPDB20PH60 |
Vendor | Fairchild Semiconductor |
Category | Integrated Circuits (ICs) |
Applications | Front End Rectifiers |
Current - Supply | 26mA |
Voltage - Supply | 20V |
Package / Case | SPM27GA |
Packaging | Tube |
Operating Temperature | -20°C ~ 100°C |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FPDB20PH60 FPDB20PH60 |