FPD2000V

Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	-3V < VGS < +0V		12	V
Gate-Source Voltage	VGS	0V < VDS < +8V		-3	V
Drain-Source Current	IDS	For VDS > 2V		IDSS	mA
Gate Current	IG	Forward or reverse current		+15/-2	mA
RF Input Power2	PIN	Under any acceptable bias state		900	mW
Channel Operating Temperature	TCH	Under any acceptable bias state		175	ºC
Storage Temperature	TSTG	Non-Operating Storage	-40	150	ºC
Total Power Dissipation	PTOT	See De-Rating Note below		8.5	W
Gain Compression	Comp.	Under any bias conditions		5	dB
Simultaneous Combination of Limits3		2 or more Max. Limits		80	%

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT=8.5W (0.056W/°C) x  T_HS
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT = 8.5W (0.056 x (85 22)) = 4.9W

Description

The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source.

FPD2000V applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.