FPD200

Features:

 19 dBm Linear Output Power at 12 GHz
 12 dB Power Gain at 12 GHz
 17 dB Maximum Stable Gain at 12 GHz
 12 dB Maximum Stable Gain at 18 GHz
 45% Power-Added Efficiency


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	-3V < VGS < +0V		8	V
Gate-Source Voltage	VGS	0V < VDS < +8V		-3	V
Drain-Source Current	IDS	For VDS > 2V		IDSS	mA
Gate Current	IG	Forward or reverse current		10	mA
RF Input Power2	PIN	Under any acceptable bias state		100	mW
Channel Operating Temperature	TCH	Under any acceptable bias state		175	ºC
Storage Temperature	TSTG	Non-Operating Storage	-40	150	ºC
Total Power Dissipation	PTOT	See De-Rating Note below		0.5	W
Gain Compression	Comp.	Under any bias conditions		5	dB
Simultaneous Combination of Limits3		2 or more Max. Limits		80	%

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT= 500mW (3.6mW/°C) x T_HS
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT = 0.5W (0.0036 x (85 22)) = 0.27W

Description

The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable mediumpower applications. The FPD200 also features Si3N4 passivation and is available in a low cost plastic package.

FPD200 applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.