IGBT Transistors 1200V 50A PIM
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Configuration : | Hex | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 3.2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 50 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 230 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | EconoPIM3-24 |