Features: · Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. PinoutSpecifications Parameter Symbol Conditions Ratings Unit Allowable power Dissipation PD Tc=25°C, 1 unit ...
FP502: Features: · Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. PinoutSpecifications ...
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· Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly.
Parameter | Symbol | Conditions | Ratings | Unit |
Allowable power Dissipation | PD | Tc=25°C, 1 unit |
3.5 |
W |
PD | Mounted on ceramic board (250mm2*0.8mm) 1 unit |
1.5 |
W | |
Storage Temperature | Tstg |
-55to+150 |
°C | |
[MOS block] | ||||
Drain-to-Source Voltage | VDSS |
11 |
V | |
Gate-to-Source Voltage | VGSS |
±10 |
V | |
Drain Current(DC) | ID |
2 |
A | |
Drain Current(Pulse) | IDP | PW10ms, duty cycle1% |
8 |
A |
Channel Temperature | Tch |
150 |
°C | |
[Diode block] | ||||
Average Rectified Current | IO |
500 |
mA |