Features: • 50 4000 MHz• Up to +31 dBm P1dB• Up to +45 dBm Output IP3• High Drain Efficiency• 19 dB Gain @ 900 MHz• MTBF >100 Years• SOT-89 SMT PackageSpecifications Parameters Rating Operating Case TemperatureStorage TemperatureMaximum DC...
FP2189: Features: • 50 4000 MHz• Up to +31 dBm P1dB• Up to +45 dBm Output IP3• High Drain Efficiency• 19 dB Gain @ 900 MHz• MTBF >100 Years• SOT-89 SMT PackageS...
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Features: • High operating temperature • High output voltage• Robust cylindrical...
Features: • High operating temperature• High output voltage• Robust cylindrical ...
Parameters |
Rating |
Operating Case Temperature Storage Temperature Maximum DC Power RF Input Power (continuous) |
-40 to +85 °C -40 to +125 °C 4.0 W +20 dBm |
The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. FP2189 works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression.
The FP2189 conforms to WJ Communications' long history of producing high reliability and quality components. The FP2189 has an associated MTBF of greater than 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested.
The FP2189 is targeted for use as driver amplifiers for wireless infrastructure where high performance and highefficiency are required.