Features: · Composite type with 2 transistors (PNP) contained in one package, facilitating high-density mounting.· The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package.PinoutSpecifications Parameter Symbo Conditions Ratings Unit Collector-to-Bas...
FP210: Features: · Composite type with 2 transistors (PNP) contained in one package, facilitating high-density mounting.· The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one pac...
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Features: • High operating temperature • High output voltage• Robust cylindrical...
Features: • High operating temperature• High output voltage• Robust cylindrical ...
Parameter |
Symbo |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
-60 |
V | |
Collector-to-Emitter Votage |
VCEO |
-50 |
V | |
Emitter-to-Base Voltage |
VEBO |
-6 |
V | |
collector current |
IC |
-2 |
A | |
Collector Current(Pulse) |
ICP |
-4 |
A | |
Base Current |
IB |
-400 |
mA | |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2´0.8mm) 1 unit |
0.8 |
W |
Total Power Dissipation |
TJ |
Mounted on ceramic board (250mm2´0.8mm) |
1.1 |
W |
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
-55to+125 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 2 |
PC [W] | 0.8
When mounted on ceramic substrate (250mm²×0.8mm) 1unit |
Electrical characteristics | |
---|---|
hFE min | 140 |
hFE max | 400 |
VCE [V] | 2 |
IC [A] | 0.1 |
fT typ [MHz] | 150 |
VCE [V] | 10 |
IC [mA] | 50 |
VCE (sat) typ [V] | 0.3 |
VCE (sat) max [V] | 0.7 |
IC [A] | 1 |
IB [mA] | 50 |