Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C, placed in one package.PinoutSpecifications Absol...
FP102: Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP102 is formed with 2chips, one being equivalent to t...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 11 |
IC [A] | 3 |
PC [W] | 1.3
When mounted on ceramic substrate (250mm²×0.8mm) 1unit |
VRRM [V] | 30 |
IO [A] | 0.7 |
Electrical characteristics | |
---|---|
hFE min | 140 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.22 |
VCE (sat) max [V] | 0.4 |
IC [A] | 1.5 |
IB [mA] | 30 |
VF max [V] | 0.55 |
IF [A] | 0.7 |
IR max [mA] | 0.08 |
VR [V] | 15 |
trr max *typ [nS] | 10 |
IF [A] | 0.1 |
Parameter |
Symbo |
Conditions |
Ratings |
Unit |
[TR] | ||||
Collector-to-Base Voltage |
VCBO |
-15 |
V | |
Collector-to-Emitter Votage |
VCEO |
-11 |
V | |
Emitter-to-Base Voltage |
VEBO |
-7 |
V | |
collector current |
IC |
-3 |
A | |
Collector Current(Pulse) |
ICP |
-5 |
A | |
Base current |
IB |
-600 |
mA | |
Collector Dissipation |
PC |
Mounted on ceramic board 250mm2´0.8mm) |
1.3 |
W |
Junction Temperature |
TJ |
150 |
°C | |
[SBD] | ||||
Repetitive Peak Reverse Volatage |
VRRM |
30 |
V | |
Non-repetitive Peak Reverse Surge Voltage |
VRSM |
35 |
V | |
Average-rectified Current |
IO |
700 |
Am | |
Surge Forward Current |
IFSM |
50HZ sine wav,1cycle |
5 |
A |
Junction Temperature |
Tj |
-55to+125 |
°C | |
Storage Temperature |
Tstg |
-55to+125 |
°C |