Clamp Multimeters & Accessories FUSE 10A 1000V 2PK CERAMIC 33-34XR
FP100: Clamp Multimeters & Accessories FUSE 10A 1000V 2PK CERAMIC 33-34XR
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Ranging : | 1000 V |
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
Output Power @ 1 dB Compression |
P1dB |
f = 12 GHz; VDS = 5V; IDS = 50% IDSS |
13 |
14 |
dBm | |
Power Gain @ 1 dB Compression |
G1dB |
f = 12 GHz; VDS = 5V; IDS = 50% IDSS |
8 |
9 |
dB | |
Maximum Available Gain |
MAG |
f = 12 GHz; VDS = 5V; IDS = 50% IDSS |
14.5 |
15.5 |
dB | |
Noise Figure |
NF |
f = 12 GHz; VDS = 5V; IDS = 50% IDSS |
3.0 |
dB | ||
Power-Added Efficiency |
f = 12 GHz; VDS = 5V; IDS = 50% IDSS; POUT = 15.5 dBm |
20 |
25 |
% | ||
Saturated Drain-Source Current |
IDSS |
VDS = 2 V; VGS = 0 V |
15 |
30 |
mA | |
Transconductance |
GM |
VDS = 2 V; VGS = 0 V |
15 |
20 |
mS | |
Pinch-Off Voltage |
VP |
VDS = 2 V; IDS = 1 mA |
-0.50 |
-2.5 |
V | |
Gate-Drain Breakdown Voltage Magnitude |
VBDGD |
IGS = 1 mA |
8 |
10.5 |
V | |
Gate-Source Breakdown Voltage Magnitude |
VBDGS |
IGS = 1 mA |
7 |
10 |
V | |
Gate-Source Leakage Current Magnitude |
IGSL |
VGS = -5 V |
4 |
10 |
A |
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
FP100 applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications.