FM25L256

The FM25L256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. FM25L256 provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike serial EEPROMs, the FM25L256 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the FM25L256 offers virtually unlimited write endurance.Also, FRAM exhibits much lower power consumption than EEPROM.

These capabilities make the FM25L256 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.

The FM25L256 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L256 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.