Features: · Organized as 512 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationThe versatility of FRAM technology fits into manydiverse applications. Clearly the strength of highe...
FM25040: Features: · Organized as 512 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplication...
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Description | Ratings |
Ambient storage or operating temperature | -40°C to + 85°C |
Voltage on any pin with respect to ground | -1.0V to +7.0V |
D.C. output current on any pin | 5 mA |
Lead temperature (Soldering, 10 seconds) | 300° C |
The FM25040 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM25040 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.
In-system operation of the FM25040 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. FM25040 provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM25040 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM25040 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.