FM25040

Features: · Organized as 512 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationThe versatility of FRAM technology fits into manydiverse applications. Clearly the strength of highe...

product image

FM25040 Picture
SeekIC No. : 004342247 Detail

FM25040: Features: · Organized as 512 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplication...

floor Price/Ceiling Price

Part Number:
FM25040
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·  Organized as 512 x 8 bits
·  High endurance 10 Billion (1010) read/writes
·  10 year data retention at 85° C
·  NoDelay™ write
·  Advanced high-reliability ferroelectric process



Application

The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time
programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.



Pinout

  Connection Diagram


Specifications

Description Ratings
Ambient storage or operating temperature -40°C to + 85°C
Voltage on any pin with respect to ground -1.0V to +7.0V
D.C. output current on any pin 5 mA
Lead temperature (Soldering, 10 seconds) 300° C




Description

The FM25040 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM25040 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.

In-system operation of the FM25040 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. FM25040 provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.

These capabilities make the FM25040 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM25040 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - External/Internal (Off-Board)
Programmers, Development Systems
Discrete Semiconductor Products
Industrial Controls, Meters
Memory Cards, Modules
Crystals and Oscillators
View more