Features: • Organized as 512 x 8 bits• Unlimited Read/Write Cycles• 10 Year Data Retention• NoDelay™ Writes• Advanced High-Reliability Ferroelectric ProcessPinoutSpecifications Symbol Description Ratings VDD Power Supply Voltage with respect to VSS...
FM25CL04: Features: • Organized as 512 x 8 bits• Unlimited Read/Write Cycles• 10 Year Data Retention• NoDelay™ Writes• Advanced High-Reliability Ferroelectric ProcessPinout...
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Symbol | Description | Ratings |
VDD | Power Supply Voltage with respect to VSS | -1.0V to +5.0V |
VIN | Voltage on any pin with respect to VSS | -1.0V to +5.0V and V < V +1.0V |
TSTG | Storage Temperature | -55°C to + 125°C |
TLEAD | Lead Temperature (Soldering, 10 seconds) | 300° C |
The FM25CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM25CL04 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.
In-system operation of the FM25CL04 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM25CL04 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM25CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1808 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.