FM25256

Features: 256K bit Ferroelectric Nonvolatile RAM• Organized as 32,768 x 8 bits• Unlimited Read/Write Cycles• 10 Year Data Retention• NoDelay™ Writes• Advanced High-Reliability Ferroelectric ProcessPinoutSpecifications Symbol Description Ratings VDD ...

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FM25256 Picture
SeekIC No. : 004342253 Detail

FM25256: Features: 256K bit Ferroelectric Nonvolatile RAM• Organized as 32,768 x 8 bits• Unlimited Read/Write Cycles• 10 Year Data Retention• NoDelay™ Writes• Advanced Hig...

floor Price/Ceiling Price

Part Number:
FM25256
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• Unlimited Read/Write Cycles
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process



Pinout

  Connection Diagram




Specifications

Symbol Description Ratings
VDD

Power Supply Voltage with respect to VSS

-1.0V to +7.0V

VIN

Voltage on any pin with respect to VSS

-1.0V to +7.0V
and VIN < VDD+1.0V

TSTG

Storage Temperature

-55°C to + 125°C

 TLEAD

Lead temperature (Soldering, 10 seconds)

 300° C

 VESD Electrostatic Discharge Voltage
- Human Body Model (JEDEC Std JESD22-A114-B)
- Charged Device Model (JEDEC Std JESD22-C101-A)
- Machine Model (JEDEC Std JESD22-A115-A)


 3kV
1kV
100V

  Package Moisture Sensitivity Level

 MSL-1




Description

The FM25256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. FM25256 provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike serial EEPROMs, the FM25256 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the FM25256 offers virtually unlimited write endurance.Also, FRAM exhibits much lower power consumption than EEPROM.

These capabilities make the FM25256 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.

The FM25256 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25256 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85




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