Features: • High Output Power: P1dB = 31.8dBm(Typ.)• High Gain: G1dB = 7.5dB(Typ.)• High PAE: add = 35%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit. Drain-Source Voltage VDS 15 V Gate-...
FLC167WF: Features: • High Output Power: P1dB = 31.8dBm(Typ.)• High Gain: G1dB = 7.5dB(Typ.)• High PAE: add = 35%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...
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Features: `SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION`DEDICATED THYRISTOR STRUCTU...
Item | Symbol |
Condition |
Rating | Unit. |
Drain-Source Voltage | VDS | 15 | V | |
Gate-Source Voltage | VGS | -5 | V | |
Total Power Dissipation | PT | Tc = 25°C | 7.5 | W |
Storage Temperature | TSTG | -65 to +175 | ||
Channel Temperature | Tch | 175 |
The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program FLC167WF assures the highest reliability and consistent performance.