FJP5304D

Transistors Bipolar (BJT) NPN Si Transistor Tripple Diff Planar

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SeekIC No. : 00212719 Detail

FJP5304D: Transistors Bipolar (BJT) NPN Si Transistor Tripple Diff Planar

floor Price/Ceiling Price

Part Number:
FJP5304D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Packaging : Bulk
Package / Case : TO-220
Emitter- Base Voltage VEBO : 12 V


Application

* Wide Safe Operating Area
* Built-in Free Wheeling diode
* Suitable for Electronic Ballast Application
* Small Variance in Storage Time





Specifications



Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FJP5304DTU Full Production RoHS Compliant $0.344 TO-220 3 RAIL TBD Line 1: $Y (Fairchild logo)
Line 2: &3 Line 3: J5304D
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FJP5304D is available. Click here for more information .


Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current (DC)

4

A

ICP

* Collector Current (Pulse)

8

A

IB

Base Current (DC)

2

A

IBP

* Base Current (Pulse)

4

A

PC

Collector Dissipation (TC =25° C)

70

W

TSTG

Storage Temperature

- 65 ~ 150

°C






Parameters:

Technical/Catalog InformationFJP5304D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)4A
Power - Max70W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)100mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJP5304D
FJP5304D



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