FJP5021

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 15
Packaging : Bulk
Package / Case : TO-220
Maximum Operating Frequency : 18 MHz
Collector- Emitter Voltage VCEO Max : 500 V


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	800	V
VCEO	Collector-Emitter Voltage	500	V
VEBO	Emitter-Base Voltage	7	V
IC	Collector Current (DC)	5	A
ICP	*Collector Current (Pulse)	10	A
IB	Base Current (DC)	2	A
PC	Collector Dissipation (TC =25° C)	50	W
TJ	Junction Temperature	150	°C
TSTG	Storage Temperature	- 55 ~ 150	°C

Parameters:

Technical/Catalog Information	FJP5021
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	500V
Current - Collector (Ic) (Max)	5A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 600mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 600mA, 3A
Frequency - Transition	18MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJP5021 FJP5021