Transistors Bipolar (BJT) NPN Epitaxial Silicon
FJP5200OTU: Transistors Bipolar (BJT) NPN Epitaxial Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 230 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 15 A | ||
Configuration : | Single | Maximum Operating Frequency : | 30 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | FJP5200OTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 230V |
Current - Collector (Ic) (Max) | 15A |
Power - Max | 100W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
Frequency - Transition | 30MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220AB-3 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FJP5200OTU FJP5200OTU |