FJAF4310YTU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00212749 Detail

FJAF4310YTU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
FJAF4310YTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 30 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-3PF
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 30 MHz
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-3PF


Parameters:

Technical/Catalog InformationFJAF4310YTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)140V
Current - Collector (Ic) (Max)10A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-3PF
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJAF4310YTU
FJAF4310YTU



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