FJAF4210RTU, US $ .79-1.17 , Fairchild Semiconductor, FJAF4210RTU DataSheet download, circuit diagram from SeekIC.com

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FJAF4210RTU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

FJAF4210RTU Data Sheet

US $ .79~1.17 / Piece | Get Latest Price

Part Number:: FJAF4210RTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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0~360
360~500
500~1000
1000~2000

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$1.17
$1.03
$.85
$.79

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15 Days
15 Days
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Upload time: 2024/11/21

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FJAF4210 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -20...
FJAF4210OTU evaluate
US $.67 - .99 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
FJAF4210YTU evaluate
US $.67 - .99 / Piece

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	- 6 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	30 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3PF
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 30 MHz
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-3PF

Parameters:

Technical/Catalog Information	FJAF4210RTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	10A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3PF
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJAF4210RTU FJAF4210RTU

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FJAF4210RTU

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