FHX35X/002

Features:

• High Transconductance
• Low Leakage Current
• Low Gate Capacitance
• Gold Bonding System
• Proven Reliability


Specifications

Item	Symbol	Conditions	Ratings	Unit
Drain-Source Voltage	VDS		6	V
Gate-Source Voltage	VGS		-5	V
Total Power Dissipation	PT		290	mW
Storage Temperature	Tstg		-65 to 175	°C
Channel Temperature	Tch		+175	°C
Thermal Resistance	Rth	Channel to Case	150	°C/W

Description

The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT FHX35X/002 combines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu's stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance.