FHX35LG/002

Features:

• High Transconductance
• Low Leakage Current
• Low Gate Capacitance
• Gold Bonding System
• Proven Reliability


Specifications

Item	Symbol	Conditions	Ratings	Unit
Drain-Source Voltage	VDS		6	V
Gate-Source Voltage	VGS		-5	V
Total Power Dissipation	PT		290	mW
Storage Temperature	Tstg		-65 to 175	°C
Channel Temperature	Tch		+175	°C
Thermal Resistance	Rth	Channel to Case	150	°C/W

Description

The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT of FHX35LG/002 and FHX35X/002 combines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu's stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance.