IGBT Transistors Shorted AnodeTM IGBT
FGA30S120P: IGBT Transistors Shorted AnodeTM IGBT
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Collector- Emitter Voltage VCEO Max : | 1300 V | Collector-Emitter Saturation Voltage : | 2.3 V | ||
Maximum Gate Emitter Voltage : | 25 V | Continuous Collector Current at 25 C : | 60 A | ||
Gate-Emitter Leakage Current : | 500 nA | Power Dissipation : | 174 W | ||
Package / Case : | TO-3PN | Packaging : | Tube |