IGBT Transistors 1200V 30A FS
FGA30N120FTDTU: IGBT Transistors 1200V 30A FS
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 25 V |
Continuous Collector Current at 25 C : | 30 A | Power Dissipation : | 339 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |
Technical/Catalog Information | FGA30N120FTDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA30N120FTDTU FGA30N120FTDTU |