IGBT Transistors 1700V 1200A DUAL
FF1200R17KE3: IGBT Transistors 1700V 1200A DUAL
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Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 1700 V |
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 1600 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 5.95 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM130-10 |