FF1200R17KE3, US $ 849.03-849.03 , Infineon Technologies, FF1200R17KE3 DataSheet download, circuit diagram from SeekIC.com

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FF1200R17KE3: IGBT Transistors 1700V 1200A DUAL

FF1200R17KE3 Data Sheet

US $ 849.03~849.03 / Piece | Get Latest Price

Part Number:: FF1200R17KE3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/22

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Product Details

Quick Details

Configuration :	Dual	Collector- Emitter Voltage VCEO Max :	1700 V
Collector-Emitter Saturation Voltage :	2 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	1600 A	Gate-Emitter Leakage Current :	400 nA
Power Dissipation :	5.95 KW	Maximum Operating Temperature :	+ 125 C
Package / Case :	IHM130-10

Description

Packaging :
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector-Emitter Saturation Voltage : 2 V
Configuration : Dual
Collector- Emitter Voltage VCEO Max : 1700 V
Continuous Collector Current at 25 C : 1600 A
Power Dissipation : 5.95 KW
Package / Case : IHM130-10

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FF1200R17KE3

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