IGBT Transistors 1200V 1200A IGBT Module
FF1200R12KE3: IGBT Transistors 1200V 1200A IGBT Module
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 1.7 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 1200 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 5 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM 130X140-10 |