FF1200R12KE3, US $ 577.6-770.14 , Infineon Technologies, FF1200R12KE3 DataSheet download, circuit diagram from SeekIC.com

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FF1200R12KE3: IGBT Transistors 1200V 1200A IGBT Module

FF1200R12KE3 Data Sheet

US $ 577.6~770.14 / Piece | Get Latest Price

Part Number:: FF1200R12KE3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$770.14
$693.12
$616.11
$577.6

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15 Days
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Upload time: 2024/11/22

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Recent History
What is this?

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Product Details

Quick Details

Configuration :	Dual	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	1.7 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	1200 A	Gate-Emitter Leakage Current :	400 nA
Power Dissipation :	5 KW	Maximum Operating Temperature :	+ 125 C
Package / Case :	IHM 130X140-10

Description

Packaging :
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Dual
Collector-Emitter Saturation Voltage : 1.7 V
Continuous Collector Current at 25 C : 1200 A
Power Dissipation : 5 KW
Package / Case : IHM 130X140-10

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FF1200R12KE3

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