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FDW2508PB

MOSFET -12V Dual P-Ch -1.8VSpecif MOSFET

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SeekIC No. : 00160281 Detail

FDW2508PB: MOSFET -12V Dual P-Ch -1.8VSpecif MOSFET

FDW2508PB Data Sheet

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Part Number:
FDW2508PB
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSSOP-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Resistance Drain-Source RDS (on) : 18 mOhms
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Parameters:

Technical/Catalog InformationFDW2508PB
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs18 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 3775pF @ 6V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs45nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDW2508PB
FDW2508PB
FDW2508PBCT ND
FDW2508PBCTND
FDW2508PBCT



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