FDV302P_NB8V001

MOSFET Digital FET P-Ch

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SeekIC No. : 00148395 Detail

FDV302P_NB8V001: MOSFET Digital FET P-Ch

floor Price/Ceiling Price

US $ .07~.12 / Piece | Get Latest Price
Part Number:
FDV302P_NB8V001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.12
  • $.11
  • $.09
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 10000 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23-3 Packaging : Reel    

Description

Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 8 V
Package / Case : SOT-23-3
Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 10000 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationFDV302P_NB8V001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C120mA
Rds On (Max) @ Id, Vgs10 Ohm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds 11pF @ 10V
Power - Max350mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs0.31nC @ 4.5V
Package / CaseSOT-23
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDV302P_NB8V001
FDV302P_NB8V001



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