FDU6688

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 84 A
Resistance Drain-Source RDS (on) : 4 mOhms
Package / Case : TO-251


Features:

84 A, 30 V. R_DS(ON) = 5 m @ VGS = 10 V
                    R_DS(ON) = 6 m @ VGS = 4.5 V 

Low gate charge 

Fast switching 

High performance trench technology for extremely
   low R_DS(ON)

Application

DC/DC converter 

Motor Drives

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 3)                         Pulsed       (Note 1a)	84	A
		100
PD	Power Dissipation for Single Operation (Note 1)                                                             (Note 1a)                                                             (Note 1b)	83	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDU6688 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.

Parameters:

Technical/Catalog Information	FDU6688
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	84A
Rds On (Max) @ Id, Vgs	5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	3845pF @ 15V
Power - Max	1.6W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU6688 FDU6688