FDU6682

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0062 Ohms
Continuous Drain Current : 75 A
Package / Case : TO-251


Features:

75 A, 30 V  R_DS(ON) = 6.2 m@ V_GS = 10 V
                     R_DS(ON) = 8.0 m@ V_GS = 4.5 V 

Low gate charge 

Fast switching 

High performance trench technology for extremely
   low R_DS(ON)

Application

DC/DC converter

Motor Drives

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 3)                         Pulsed       (Note 1a)	75	A
		100
PD	Power Dissipation for Single Operation (Note 1)                                                             (Note 1a)                                                              (Note 1b)	71	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDU6682 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.