FDP65N06

MOSFET 60V N-Channel MOSFET

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FDP65N06: MOSFET 60V N-Channel MOSFET

floor Price/Ceiling Price

US $ .35~.59 / Piece | Get Latest Price
Part Number:
FDP65N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.59
  • $.52
  • $.44
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 65 A


Parameters:

Technical/Catalog InformationFDP65N06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C65A
Rds On (Max) @ Id, Vgs16 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds 2170pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs43nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP65N06
FDP65N06



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