FDP6030L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 13 m Ohms


Features:

*52 A, 30 V. R_DS(ON)  = 0.0135 @  V_GS =10 V                      
                  R_DS(ON)  = 0.020 @  V_GS =4.5 V.      
*Improved  replacement for NDP6030L/NDB6030L.
*Low gate charge (typical 34 nC).
*Low Crss (typical 175 pF).
*Fast switching speed.


Specifications

Symbol	Parameter	FDP4020P	FDB4020P	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage - Continuous	±20		V
ID	Drain Current - Continuous - Pulsed	52		A
		156
PD	Maximum Power Dissipation @ Tc = 25 Derate above 25	75		W
		0.5		W/
TJ, TSTG	Operating and Storage Temperature Range	-65 to 175

Description

  These FDP6030L N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  These devices FDP6030L are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	FDP6030L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	13 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	1250pF @ 15V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP6030L FDP6030L