FDP5690

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

• 32 A, 60 V.  R _DS(ON)=  0.027 Ω @ VGS = 10 V
                      R _DS(ON)= 0.032 Ω @ VGS = 6  V
•  Critical DC electrical parameters specified at evevated temperature.
•  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
•  High performance trench technology for extremely low  R _DS(ON)
•  175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP5690	FDB5690	Units
VDSS	Drain-Source Voltage	80		V
VGSS	Gate-Source Voltage	± 20		V
ID	Drain Current - Continuous                            - Pulsed	32		A
		100
PD	Total Power Dissipation @ TC = 25	58		W
	Derate above 25	0.4		W/°C
TJ, Tstg	Operating and Storage Temperature Range	-65 to +175		°C

Description

This FDP5690 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These FDP5690 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDP5690
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	27 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1120pF @ 25V
Power - Max	58W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP5690 FDP5690