FDP51N25

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

* 51A, 250V, R _DS(on) = 0.060W@V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low C_rss ( typical 63 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability




Specifications

Symbol	Parameter	FDP51N25	Unit
VDSS	Drain-Source Voltage	250	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	51 30	A A
IDM	Drain Current Pulsed (Note 1)	204	A
VGSS	Gate-Source voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1111	mJ
IAR	I Avalanche Current (Note 1)	51	A
EAR	Repetitive Avalanche Energy (Note 1)	32	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	320 2.56	W W/
TJ,TSTG	Operating and Storage Temperature Range	-55to+150
TL	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300

Description

These FDP51N25 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDP51N25 are well suited for high efficient switched mode power supplies and active power factor correction.

The FDP51N25 is designed as one kind of N-Channel enhancement mode power field effect transistors which is produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficienct switched mode power supplies and active power factor correction.

FDP51N25 has six features. (1) 51A, 250V, Rds(on) = 0.060 at Vgs=10V. (2) Low gate charge ( typical 55 nC). (3) Low Crss ( typical 63pF). (4) It would have fast switching. (5) 100% avalanche tested. (6) Improved dv/dt capability. That are all the main features.

Also some absolute maximum ratings of FDP51N25 have been concluded into several points as follow. (1) Its drain to source voltage would be 250V. (2) Its drain current would be 51A for continuous Tc=25°C and would be 30A for continuous Tc=100°C. (3) Its drain current pulsed would be 204A. (4) Its gate to source voltage would be +/-30V. (5) Its single pulsed avalanche energy would be 1111mJ. (6) Its avalanche current would be 51A. (7) Its repetitive avalanche energy would be 32mJ. (8) Its peak diode recovery dv/dt would be 4.5V/ns. (9) Its power dissipation would be 320W and would be 2.56W/°C. (10) Its operating and storage temperature range would be from -55°C to +150°C. (11) Its maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds would be 300°C.

Also some electrical characteristics about FDP51N25. (1) Its drain to source breakdown voltage would be min 250V. (2) Its breakdown voltage temerature coefficient would be typ 0.25V/°C. (3) Its zero gate voltage drain current would be max 1uA with condition of Vds=250V and Vgs=0V and it would be max 10uA with condition of Vds=200V and Tc=125°C. (4) Its gate-body leakage current forward would be max 100uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	FDP51N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	51A
Rds On (Max) @ Id, Vgs	60 mOhm @ 25.5A, 10V
Input Capacitance (Ciss) @ Vds	3410pF @ 25V
Power - Max	320W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP51N25 FDP51N25