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FDP55N06

MOSFET SINGLE N-CH 150V ULTRAFET TRENCH

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SeekIC No. : 00146029 Detail

FDP55N06: MOSFET SINGLE N-CH 150V ULTRAFET TRENCH

FDP55N06 Data Sheet

floor Price/Ceiling Price

US $ .43~.62 / Piece | Get Latest Price
Part Number:
FDP55N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.62
  • $.54
  • $.5
  • $.43
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.022 Ohms
Continuous Drain Current : 55 A


Parameters:

Technical/Catalog InformationFDP55N06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs22 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds 1510pF @ 25V
Power - Max114W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP55N06
FDP55N06



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