Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 150 V
Continuous Drain Current
: 35 A
Resistance Drain-Source RDS (on)
: 0.08 Ohms
Features: •rDS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A
•Q g(tot) = 33nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Application• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
150 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
35 |
A |
|
Continuous (TC = 100, VGS = 10V) |
24 |
|
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
5 |
A |
|
Pulsed |
Figure 4 |
A |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
90 |
mJ |
|
PD |
Power dissipation |
150 |
W |
|
Derate above 25 |
1.00 |
W/°C |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
Parameters: | Technical/Catalog Information | FDP42AN15A0 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP42AN15A0
FDP42AN15A0
|
FDP42AN15A0 Data Sheet
