MOSFET P-Ch 2.5V Specified Enhancement Mode
FDP4020P: MOSFET P-Ch 2.5V Specified Enhancement Mode
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 16 A | ||
Resistance Drain-Source RDS (on) : | 0.036 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | FDP4020P | FDB4020P | Units |
VDSS | Drain-Source Voltage | -20 | V | |
VGSS | Gate-Source Voltage |
±8 | V | |
ID | Drain Current - Continuous - Pulsed |
-16 | A | |
-48 | ||||
PD | Total Power Dissipation @ TC = 25 | 37.5 | W | |
Derate above 25 | 0.25 | W/ | ||
TJ, TSTG | Operating and Storage Junction Temperature Range | -65 to +175 |
This FDP4020P P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.
Technical/Catalog Information | FDP4020P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 16A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 8A, 4.5V |
Input Capacitance (Ciss) @ Vds | 665pF @ 10V |
Power - Max | 37.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 13nC @ 4.5V |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDP4020P FDP4020P |